Abstract: We demonstrate the high scalability of equivalent oxide thickness (EOT) scaled HfO2-ZrO2-HfO2 (HZH) gate stacks based on FinFETs with a physical gate length (Lg) of 25 nm. Benefiting from ...
Abstract: As technology continues to scale and advance, achieving the primary goals of design i.e., low power consumption and faster circuitry have become more feasible. The continuous advancement of ...
Imec and KU Leuven researchers published “Integration and electrical evaluation of WS2 and MoS2 fets in a 300 mm pilot line.” ...
Once creator-led experiments, podcasts have become a powerful ecosystem shaping narratives, reputations and hours of audience ...
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