Abstract: The Silicon Carbide (SiC) MOSFET is widely recognized for its exceptional performance attributes. However, two primary issues restrict the operational capabilities of SiC MOSFET power ...
Abstract: In this work, time-dependent gate reliability studies were carried out on GaN high-electron-mobilitytransistors (HEMTs) under continuous DC gate bias ($\mathrm{V}_{\mathrm{GS}}$) and ...
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